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| v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Features +45 dBm Output IP3 (Balanced Configuration) 12 dB Gain 48% PAE @ +30.5 dBm Pout +20 dBm W-CDMA Channel Power @ -45 dBc ACP 3 x 3 x 1 mm QFN SMT Package 8 AMPLIFIERS - SMT Typical Applications A high linearity 1 watt amplifier for: * Multi-Carrier Systems * GSM, GPRS & EDGE * CDMA & W-CDMA * PHS * Balanced or Push-Pull Configurable Functional Diagram General Description The HMC461LP3 is a 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifier. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be configured in a balanced or push-pull amplifier circuit. The amplifier provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced configuration. The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 makes the HMC461LP3 an ideal driver amplifier for PCS/3G wireless infrastructure. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifier IC. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifications*, TA = +25 C, Vs= +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 41 26 10 Min. Typ. 1.7 - 1.9 12.5 0.012 17 20 29 29.5 44 6.5 300 42 26.5 0.02 9 Max. Min. Typ. 1.9 - 2.2 12 0.012 18 25 29.5 30.5 45 6 300 0.02 Max. Units GHz dB dB / C dB dB dBm dBm dBm dB mA * Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 8 - 272 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss 15 10 5 S21 S11 S22 Gain vs. Temperature 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1.7 8 AMPLIFIERS - SMT 8 - 273 GAIN & RETURN LOSS (dB) -5 -10 -15 -20 -25 1 1.5 2 FREQUENCY (GHz) 2.5 3 GAIN (dB) 0 +25C +85C -40C 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C Output Return Loss vs. Temperature 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) +85C -40C +25C +85C -40C -10 -15 -20 -25 -30 1.5 -10 -15 -20 -25 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 33 32 31 30 Psat vs. Temperature 33 32 31 30 P1dB (dBm) 29 28 27 26 25 24 23 1.7 1.8 1.9 2 2.1 2.2 2.3 +25C +85C -40C Psat (dBm) 29 28 27 26 25 24 23 1.7 1.8 1.9 2 2.1 2.2 2.3 +25C +85C -40C FREQUENCY (GHz) FREQUENCY (GHz) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 1.7 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 +25C OIP3 (dBm) +25C +85C -40C 2 1 +85C -40C 1.8 1.9 2 2.1 2.2 2.3 0 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 1.95 GHz 52 48 Pout 44 Gain 40 PAE 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 Power Compression @ 2.15 GHz 52 48 Pout 44 Gain 40 PAE 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 4 6 8 10 12 14 16 18 20 22 24 4 6 8 10 12 14 16 18 20 22 24 INPUT POWER (dBm) INPUT POWER (dBm) Reverse Isolation vs. Temperature 0 Gain & Power vs. Supply Voltage @ 2.15 GHz 32 Gain (dB), P1dB (dBm), Psat (dBm) 30 28 26 24 22 20 18 16 14 12 10 8 4.5 4.75 5 SUPPLY VOLTAGE (Vdc) 5.25 5.5 Gain P1dB Psat -5 +25C +85C -40C ISOLATION (dB) -10 -15 -20 -25 -30 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 8 - 274 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA2000, 9 Channels Forward -40 ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DCPH -35 -40 8 AMPLIFIERS - SMT 8 - 275 -45 ACPR (dBc) -50 ACPR (dBc) CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels 4.5V 5V 5.5V -45 -50 -55 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -55 -60 Source ACPR -60 4.5V 5V 5.5V Source ACPR -65 8 10 12 14 16 18 20 22 24 Channel Output Power (dBm) -65 8 10 12 14 16 18 20 22 24 Channel Output Power (dBm) * Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are shown where corrected data is below source ACPR. Output IP2 vs. Temperature 80 +25C 75 70 65 60 55 50 1.7 +85C -40C OIP2 (dBm) 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) RF Input Power (RFin)(Vs = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 32 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc +30 dBm 150 C 2.08 W 31 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 8 - 276 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions Pin Number 2, 3, 5 - 8, 10, 11, 13 - 16 Function N/C Description This pin may be connected to RF ground. RF Input. This pin is AC coupled. An off chip series matching capacitor is required. Interface Schematic 8 AMPLIFIERS - SMT 8 - 277 1, 4 IN1, IN2 9, 12 OUT1, OUT2 RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Recommended Application Circuit for Balanced Amplifier Configuration Recommended Component Values L1, L2 C1, C2 C5, C6 C7, C8 C3, C4 C7, C8 C9, C10 R1, R2 8.2 nH 2.2 F 5.0 pF 0.9 pF 100 pF 0.8 pF 4.0 pF 130 Ohm Impedance Physical Length Electrical Length TL1 50 Ohm 0.09" 9.5 TL2 50 Ohm 0.18" 19 PCB Material: 10 mil Rogers 4350, Er = 3.48 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Evaluation PCB J3, J4 Pin Number 1, 2, 3 4, 5, 6 Description GND Vs List of Materials Item J1, J2 J3, J4 C1, C2 C3, C4 C5, C6 C7, C8 C9, C10 L1, L2 U1 U2, U3 PCB* Description PC Mount SMA Connector 2 mm DC Header 2.2 F Capacitor, Tantalum 100 pF Capacitor, 0402 Pkg. 5 pF Capacitor, 0402 Pkg. 0.8 pF Capacitor, 0402 Pkg. 4 pF Capacitor, 0402 Pkg. 8.2 nH Inductor, 0402 Pkg. HMC461LP3 Power Amplifier Panasonic Balun, P/N EHFFD - 1619 106483 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350, Er = 3.48 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 8 - 278 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 279 |
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